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Re: Regarding Boyk and Sussman, Cheever, etc.

Based on the specifics of the manufacturing, such as layer thickness and uniformity, I could imagine the actual behavior to vary from fet to fet. That being the case, I would guess then that it would be necessary to obtain an actual transfer function for the exact transistor you are using in order to model it adequately. That would be a big PITA I guess.



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